OPTICAL AND PHOTOVOLTAIC CHARACTERISTICS OF IN-MODIFIED SNO2 THIN-FILMS
OPTICAL AND PHOTOVOLTAIC CHARACTERISTICS OF IN-MODIFIED SNO2 THIN-FILMS
复制标题
DOI：
10.1149/1.2086733
复制
发表时间：
1990-05-01
影响因子：
3.9
通讯作者：
ELGIAR, EM
中科院分区：
文献类型：
--
作者：
BADAWY, WA;AFIFY, HH;ELGIAR, EM
采用喷雾热解技术制备了SnO2薄膜，制备方法简便，重现性好。这种方法可以在SnO2基体中掺入铟等外来物质。研究了In的加入对薄膜电导率和光学性能的影响。In的存在增加了薄膜的导电性，并且在很大程度上不影响光学性质。计算了制备的SnO2薄膜在不同层厚下的能隙。采用标准恒电位技术制备了异质结n-Si/SnO2-In太阳能电池并对其进行了研究。对制备的光伏电池的功率特性进行了分析，并与纯SnO2/Si太阳能电池进行了比较。SnO2是光谱研究中重要的电极材料，可以作为反应底物的保护窗口。它具有很高的抗化学性。可采用喷涂化学气相沉积（CVD）方法(1)制备薄膜电极。薄层透明和导电氧化物（2-5）已沉积在半导体上，以获得通常称为肖特基势垒样异质结。SnO2可以被认为是用于此目的的优秀材料，因为它在可见光和近红外范围内具有高透光率，具有耐腐蚀性，并且可以加入改变固态和界面性质的外来原子（6-10）。作为薄膜电极材料的SnO2通常在晶格中含有氧空位。由于供体如C1和Sb的存在，n型载流子浓度可提高到1020 cm-3以上，电导率可远高于102~-~ cm-1（11）。为了满足其广泛应用的要求，例如在光伏电池、光电化学器件和导电玻璃中，人们进行了许多尝试来改善SnO2薄膜的特性（12-15）。光伏装置最简单形式的效率表现为
SnO2 thin films were prepared conveniently and reproducibly using the spray-pyrolysis technique. This method enables the incorporation of foreign materials like indium in the SnO2 matrix. The effect of In incorporation on the conductivity and optical properties of the prepared films wasstudied. The presence of In in the bulk of the film increases its conductivity and does not affect the optical properties to a significant extent. The energy gap of the prepared SnO2 films was calculated for different layer thickness of pure and In-incorporated SnO2 films. Heterojunction n-Si/SnO2-In solar cells were prepared and investigated using a standard potentiostatic technique. The power characteristics of the prepared photovoltaic cells were analyzed and compared with those of pure SnO2/Si solar cells.SnO2 is an important electrode material for spectroscopic studies and can serve as a protective window for reactive substrates. It has high resistance against chemical attack. It can be prepared as thin film electrodes using the spraying chemical vapor deposition (CVD) method (1). Thin layers of transparent and conducting oxide (2-5) have been deposited onto semiconductors to obtain what is often called Schottky barrier-like heterojunctions. SnO2 can be considered as an excellent material for this purpose because of the high transmittance in the visible and near IR range, its corrosion resistance, and because of the possibility of incorporating foreign atoms which modify both solid-state and interfacial properties (6-10). The SnO2 employed as a thin film electrode material usually contains oxygen vacancies in the lattice. The n-type carrier concentration can be raised by the presence of donors such as C1 and Sb to values above 1020 cm-3 and the conductivity can be well above 102~-~ cm-1 (11). Many attempts were carried out to improve the characteristics of the SnO2 films to fulfill the requirements of its wide range of applications, eg, in photovoltaic cells, photoelectrochemical devices, and as conducting glasses (12-15). The efficiency of a photovoltaic device in its simplest form is characterized by