Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
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测量 AlGaN/GaN HEMT 中 GaN 缓冲层的热导率
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Martin Kuball
中科院分区：
文献类型：
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作者：
M. Power;J. Pomeroy;Y. Otoki;Takeshi Tanaka;Jiro Wada;M. Kuzuhara;W. Jantz;A. Souzis;Martin Kuball
通过测量通过该层的垂直温度梯度，可以确定AlGaN/GaN器件中GaN缓冲层的热导率。在这项工作中，使用金刚石微温度计和标准微拉曼热成像技术分别测定了AlGaN/GaN晶体管中碳掺杂GaN缓冲层的表面和体积深度平均温度。通过比较实测温度和有限元热模拟，得到掺杂浓度为1017 cm−3的碳掺杂GaN层的导热系数为200±20 Wm−1 K−1。
The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro‐thermometers and standard micro‐Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon‐doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20 Wm−1 K−1 was obtained for a carbon‐doped GaN layer with a doping concentration of 1017 cm−3.
用于精确测量浇口温度的金刚石微型拉曼温度计
影响因子：
4
作者：
Simon R
通讯作者：
Simon R