Metal-insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates
Metal-insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates
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DOI：
10.1063/1.1446215
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发表时间：
2002-01-28
影响因子：
4
通讯作者：
Hiroi, Z
中科院分区：
文献类型：
--
作者：
Muraoka, Y;Hiroi, Z
研究了在TiO_2（001）和（110）衬底上外延生长的VO_2薄膜中，沿c轴沿着方向的单轴应力对金属-绝缘体转变的影响。在TiO 2（001）上的膜中观察到转变温度T-MI从单晶的341 K大幅度降低到300 K，其中c轴长度由于外延应力而被压缩，而在TiO 2（110）上的膜中T-MI已经增加到369 K，其中c轴长度被扩展。C轴长度与T-MI之间存在相关性：C轴长度越短，T-MI越低。(C)2002年美国物理学会。
The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature T-MI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the T-MI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and T-MI is suggested: the shorter c-axis length results in the lower T-MI. (C) 2002 American Institute of Physics.