Giant generic topological Hall resistivity of MnSi under pressure
Giant generic topological Hall resistivity of MnSi under pressure
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DOI：
10.1103/physrevb.87.134424
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发表时间：
2013-04-29
影响因子：
3.7
通讯作者：
Pfleiderer, C.
中科院分区：
文献类型：
--
作者：
Ritz, R.;Halder, M.;Pfleiderer, C.
我们报告了MnSi在高达12 kbar压力下的详细低温磁输运和磁化测量。跟踪样品质量，压力变送器以及场和温度历史的作用，使我们能够将类似于50 n ω cm的巨大拓扑霍尔电阻率的出现与环境压力下的skyrmion晶格相联系起来。我们证明了在零温度极限下，显著大尺寸的拓扑霍尔电阻率一定是通用的。我们讨论了在环境压力下观察到的高温下导致信号小得多的各种机制。
We report detailed low-temperature magnetotransport and magnetization measurements in MnSi under pressures up to similar to 12 kbar. Tracking the role of sample quality, pressure transmitter, and field and temperature history allows us to link the emergence of a giant topological Hall resistivity similar to 50 n Omega cm to the skyrmion lattice phase at ambient pressure. We show that the remarkably large size of the topological Hall resistivity in the zero-temperature limit must be generic. We discuss various mechanisms which can lead to the much smaller signal at elevated temperatures observed at ambient pressure.