Large area deposition technique for PECVD of amorphous silicon [solar cells]
Large area deposition technique for PECVD of amorphous silicon [solar cells]
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非晶硅 PECVD 大面积沉积技术 [太阳能电池]
DOI：
10.1109/pvsc.1997.654172
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
H. Schade
中科院分区：
文献类型：
--
作者：
U. Stephan;J. Kuske;W. Frammelsberger;P. Lechner;W. Psyk;H. Schade
非晶硅太阳能电池的生产通常需要大面积、高沉积速率的等离子体反应器。将射频频率从传统的 13.56 MHz 提高到 VHF 已经证明了更高的沉积速率和更低的颗粒产生。但VHF的使用会因电极表面产生驻波（TEM波）和倏逝波导模式（TE波）而导致膜厚不均匀。由于在射频电极处使用多个电源和负载阻抗使电极电压分布均匀化，因此薄膜的不均匀性（500/spl 次/600 mm/sup 2/尺寸）降低。不均匀性从/spl plusmn/20% 降低到/spl plusmn/2.4% (27.12 MHz)，并从/spl plusmn/40% 降低到/spl plusmn/5.9% (54.24 MHz)。均匀性还取决于沉积参数，例如压力、功率和硅烷流量。
The production of amorphous silicon solar cells usually requires large area, high-deposition-rate plasma reactors. Increasing the radiofrequency from the conventional 13.56 MHz up to VHF has demonstrated higher deposition rates and lower particle generation. But the use of VHF leads to a nonuniformity of the film thickness due to the generation of standing waves (TEM wave) and evanescent waveguide modes (TE waves) at the electrode surface. The nonuniformity of the film (500/spl times/600 mm/sup 2/ size) decreases due to a homogenization of the electrode voltage distribution by using multiple power supplies and load impedances at the RF electrode. The nonuniformity decreases from /spl plusmn/20% to /spl plusmn/2.4% (27.12 MHz) and from /spl plusmn/40% to /spl plusmn/5.9% (54.24 MHz). The uniformity also depends on the deposition parameters, e.g. pressure, power and silane flow.