Probing electron charging in nanocrystalline Si dots using Kelvin probe force microscopy
Probing electron charging in nanocrystalline Si dots using Kelvin probe force microscopy
复制标题
DOI：
10.1063/1.1804250
复制
发表时间：
2004-10
影响因子：
4
通讯作者：
M. A. Salem;H. Mizuta;S. Oda
中科院分区：
文献类型：
--
作者：
M. A. Salem;H. Mizuta;S. Oda
利用开尔文探针力显微镜研究了不同尺寸纳米硅点充电前后的接触电势差(CPD)。使用原子力显微镜针尖将很少的电子注入到nc-Si点中。在正常的环境条件下，观察到了点电位的显著变化。由于点势的变化代表了nc-Si点的充电能量，因此可以通过比较计算的充电能量和测量的充电引起的CPD变化来估计存储在各个点中的电子的数量。我们通过分析每个点的CPD变化与点直径的关系，证明了该方法确实注入并直接检测到了电荷量。
By using Kelvin probe force microscopy, we investigate the contact potential difference (CPD) of nanocrystalline silicon (nc-Si) dots with various sizes before and after the dots charging. Few electrons are injected into the nc-Si dots using the atomic force microscope tip. A remarkable change in the dot potential is observed under the normal ambient conditions. Since the change in the dot potential represents the charging energy of the nc-Si dots, the number of electrons stored in the individual dots can be estimated by comparing the calculated charging energy and the measured CPD change caused by charging. We demonstrate that charge quanta are indeed injected and directly detected by this method by analyzing the dot diameter dependence of the CPD change for each dot.