Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure
Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure
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DOI：
10.1063/1.4754830
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发表时间：
2012-09
影响因子：
4
通讯作者：
Lu Liu;Jingping Xu;F. Ji;Jianing Chen;P. Lai
中科院分区：
文献类型：
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作者：
Lu Liu;Jingping Xu;F. Ji;Jianing Chen;P. Lai
在沉积后退火过程中，利用Ti和Hf原子在Ti /HfON界面附近的相互扩散，形成不同Hf/Ti比的HfxTiyON混合层，提出了一种具有锥形带隙结构的金属-氧化物-氮化物-氧化物-硅型存储器的Ti /HfON双电荷存储层（CSL），透射电镜证实了这一点。以TiON/HfON为双csl的记忆电容器在±12 V下具有5.0 V的大记忆窗口，在100 μs下具有更好的循环寿命，105次循环后几乎没有退化，并且在室温下具有良好的数据保留率，外推10年4.6 V的窗口。这与双CSL的锥形带隙结构和适当的圈闭分布密切相关。因此，TiON/HfON双csl结构为未来的电荷捕获存储器应用提供了一个非常有前途的解决方案。
A TiON/HfON dual charge storage layer (CSL) with tapered bandgap structure is proposed for metal-oxide–nitride-oxide–silicon-type memory by using the inter-diffusion of Ti and Hf atoms near the TiON/HfON interface to form an intermixing layer of HfxTiyON with varying Hf/Ti ratio in the dual CSL during post-deposition annealing, as confirmed by transmission electron microscopy. The memory capacitor with TiON/HfON as dual-CSL shows a large memory window of 5.0 V at ±12 V for 100 μs, improved cycling endurance with little degradation after 105 cycles and good data retention with an extrapolated 10-yr window of 4.6 V at room temperature. These are highly associated with the tapered bandgap structure and appropriate trap distribution in the dual CSL. Therefore, the TiON/HfON dual-CSL structure provides a very promising solution for future charge-trapping memory applications.