Recent Progress in Phase-Change Memory Technology
Recent Progress in Phase-Change Memory Technology
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DOI：
10.1109/jetcas.2016.2547718
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发表时间：
2016-06-01
影响因子：
4.6
通讯作者：
Lam, Chung H.
中科院分区：
文献类型：
--
作者：
Burr, Geoffrey W.;Brightsky, Matthew J.;Lam, Chung H.
我们回顾了过去五年PCM领域的进展，从大规模的PCM演示到高温保持和更快切换的材料改进。讨论了支持低功率开关的材料和新的电池设计，以及长周期耐久的更高可靠性。讨论了两条获得更高密度的途径：通过结合PCM和3D功能的存取器件进行3D集成，以及通过每个单元多个位，通过了解和管理非晶相的结构驰豫引起的电阻漂移。我们还简要介绍了使用PCM实现非冯·诺伊曼计算的脑启发神经形态系统这一新兴领域的工作。
We survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high-temperature retention and faster switching. Both materials and new cell designs that support lower-power switching are discussed, as well as higher reliability for long cycling endurance. Two paths towards higher density are discussed: through 3D integration by the combination of PCM and 3D-capable access devices, and through multiple bits per cell, by understanding and managing resistance drift caused by structural relaxation of the amorphous phase. We also briefly survey work in the nascent field of brain-inspired neuromorphic systems that use PCM to implement non-Von Neumann computing.