Hg3In2Te6: a promising material for optoelectronic devices
Hg3In2Te6: a promising material for optoelectronic devices
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DOI：
10.1117/12.778954
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
P. N. Gorley;Z. Grushka;Yarema Radevych;O. G. Grushka;I. Zabolotsky
中科院分区：
文献类型：
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作者：
P. N. Gorley;Z. Grushka;Yarema Radevych;O. G. Grushka;I. Zabolotsky
本文致力于研究化学计量缺陷半导体，允许极高的空位浓度为1021 cm-3，确定其不寻常的物理性质。所研究的材料Hg 3 In 2 Te 6对于创建高效的光子结构具有很高的兴趣：自校准光电二极管，高速光电二极管，具有改进灵敏度的多元件光电二极管，以及用于2-28μm光谱范围的光学滤波器。光电导测量证实了该材料在宽光谱范围内（λ=0.35-1.85 μm）具有高灵敏度，包括对CdS、CdSe、GaAs、Si和Ge的灵敏度区域。与后者相比，Hg 3 In 2 Te 6具有最低的熔化温度（983 K），可以减少合成过程中的能耗。实验结果表明Hg_3In_2Te_6在h_v = 0.74 - 3.5eV范围内具有较高的光电导量子产额。为了便于比较，我们还介绍了有关CdIn_2 Te_4晶体的研究结果。一般来说，缺陷半导体是理想的表面势垒结构和异质结的创建，因为低的表面态浓度和大气中的氧气吸收率。
This paper is dedicated to the investigation of stoichiometric defect semiconductors, allowing extremely high vacancy concentrations of 1021 cm-3, determining their unusual physical properties. The material studied, Hg3In2Te6, is of high interest for creation of efficient photonic structures: self-calibrating photodiodes, high-speed photodiodes, multi-element photodiodes with improved sensitivity, as well as optical filters for the spectral ranges of 2-28μm. Measurements of photoconductivity confirmed high sensitivity of this material in wide spectral ranges (λ=0.35-1.85 μm), including the areas of sensitivity for CdS, CdSe, GaAs, Si and Ge. In comparison with the latter, Hg3In2Te6 is characterized with the lowest melting temperature (983K) that allows reduction of energy consumption during the synthesis process. The experimental results prove high photoconductive quantum yield for Hg3In2Te6 at hν = 0.74 - 3.5 eV. For the sake of comparison, we are also presenting the investigation results concerning CdIn2Te4 crystals. In general, defect semiconductors are ideal for creation of surface-barrier structures and hetero-junctions because of low surface state concentration and atmospheric oxygen absorption rate.