Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys
Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys
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DOI：
10.1063/1.4769871
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发表时间：
2013-01-14
影响因子：
3.2
通讯作者：
Wuttig, M.
中科院分区：
文献类型：
--
作者：
Luckas, J.;Piarristeguy, A.;Wuttig, M.
在相变材料中，非晶态电阻率随时间增加，遵循幂律ρ α（t/t（0））（α RD）。电阻率的这种漂移严重阻碍了多级存储器实现相变存储器中的增加容量的潜力。本文介绍了非晶GeSnTe系统（a-GeSnTe）和其他已知的相变合金的漂移现象的化学计量依赖性，以确定低漂移材料的目的。用Sn取代Ge导致漂移参数从a-GeTe（α（RD）= 0.129）系统性降低到a-Ge 2Sn 2 Te 4（α（RD）= 0.053）。此外，随着Sn含量的增加，在结晶温度，陷阱态密度，光学带隙，和电子传导的激活能的降低被观察到。在a-GeSnTe、a-GeSbTe和a-AgInSbTe合金中，漂移参数α（RD）也与电子传导的激活能相关。这项研究表明，低漂移材料的特点是低激活能的电子传导。漂移和电子传导激活能之间的相关性表明材料优化的一个有用的标准。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4769871]
In phase-change materials, the amorphous state resistivity increases with time following a power law rho alpha (t/t(0))(alpha RD). This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric dependence of drift phenomena in amorphous GeSnTe systems (a-GeSnTe) and other known phase-change alloys with the objective to identify low drift materials. The substitution of Ge by Sn results in a systematic decrease of the drift parameter from a-GeTe (alpha(RD) = 0.129) to a-Ge2Sn2Te4 (alpha(RD) = 0.053). Furthermore, with increasing Sn content a decrease in crystallization temperature, trap state density, optical band gap, and activation energy for electronic conduction is observed. In a-GeSnTe, a-GeSbTe, and a-AgInSbTe alloys as well, the drift parameter alpha(RD) correlates to the activation energy for electronic conduction. This study indicates that low drift materials are characterized by low activation energies of electronic conduction. The correlation found between drift and activation energy of electronic conduction manifests a useful criterion for material optimization. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769871]