Photoreflectance spectroscopy of wurtzite CdS
Photoreflectance spectroscopy of wurtzite CdS
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DOI：
10.1063/1.1493655
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发表时间：
2002-07
影响因子：
3.2
通讯作者：
A. Imada;S. Ozaki;S. Adachi
中科院分区：
文献类型：
--
作者：
A. Imada;S. Ozaki;S. Adachi
Photoreflectance (PR) spectra have been measured to determine the lowest direct-band edge E0α (α=A, B, and C) of wurtzite CdS single crystal in the temperature range T=13–300 K for both E⊥c and E∥c polarizations. The measured PR spectra can be interpreted by the three-dimensional (3D) excitonic plus one-electron line shapes over the entire temperature range. The temperature dependence of the excitonic and critical-point parameters (energy, amplitude, and broadening parameter) have been determined and analyzed using the Varshni [Physica (Amsterdam) 34, 149 (1967)] equation and an analytical four-parameter expression recently developed for the explanation of the band-gap shrinkage effect in semiconductors. The 3D- exciton binding energies have also been determined to be 27 (A), 31 (B), and 30 meV (C), respectively.
