Neutral-impurity scattering in isotopically engineered Ge.
Neutral-impurity scattering in isotopically engineered Ge.
复制标题
同位素工程Ge中的中性杂质散射。
DOI：
10.1103/physrevb.50.16995
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Ozhogin
中科院分区：
文献类型：
--
作者：
Itoh;Walukiewicz;Fuchs;Beeman;Haller;Farmer;Ozhogin
本文研究了低温下同位素工程Ge单晶中电子和空穴的中性杂质散射。中子嬗变掺杂技术的使用提供了必要的掺杂剂均匀性和低补偿。我们发现之间的低温实验迁移率和相移计算的氢原子标度的杂质原子在半导体中的协议。
Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.