Preparation and electrical properties of N-doped ZnSnO thin film transistors
Preparation and electrical properties of N-doped ZnSnO thin film transistors
复制标题
N掺杂ZnSnO薄膜晶体管的制备及电性能
DOI：
10.1016/j.jallcom.2018.02.198
复制
发表时间：
2018-05-15
影响因子：
6.2
通讯作者：
Wang, Yongsheng
中科院分区：
文献类型：
--
作者：
Dai, Shiqian;Wang, Tao;Wang, Yongsheng
研究了具有交错底栅结构的N掺杂ZnSnO（ZTO：N）薄膜晶体管（TFT）的制备和电学性能。中通：采用射频磁控溅射法在SiO2/p型Si衬底上制备了N薄膜，作为TFT的有源层。二次离子质谱（西姆斯）分析结果表明，薄膜中Zn、O、Sn和N等元素分布均匀。X射线衍射（XRD）和扫描电子显微镜（SEM）的图像表明，薄膜转变从非晶态到晶态，由于退火。X射线光电子能谱（XPS）分析表明，退火后薄膜中与氧有关的缺陷减少。退火前后的薄膜在可见光区的透过率均在80%以上。用该薄膜制备的TFT表现出n沟道增强模式行为，并表现出良好的电学性能，饱和迁移率为41.8 cm（2）V（-1）s（-1），阈值电压为5.4 V，开/关电流比为6.5 × 10（7）。(C)2018爱思唯尔B. V.保留所有权利。
The preparation and electrical properties of N-doped ZnSnO (ZTO: N) thin film transistor (TFT) with a staggered bottom-gate structure were studied in this paper. ZTO: N thin film, which served as the active layer of the prepared TFT, was deposited on SiO2/p-type Si substrates by radio frequency magnetron sputtering at room temperature. Secondary ion mass spectroscopy (SIMS) analysis results showed all the species (Zn, O, Sn and N) were uniformly distributed in the thin film. X-ray Diffraction (XRD) patterns and scanning electron micrograph (SEM) images indicated that the thin film transformed from amorphous to crystalline states due to annealing. X-ray photoelectron spectra (XPS) proved that the oxygen-related defects in the thin film decreased after annealing. The thin film before and after annealing both showed a good optical transmittance of over 80% in visible light region. The TFT prepared with the thin film exhibited n-channel enhancement mode behavior and showed good electrical properties with a saturation mobility of 41.8 cm(2)V(-1)s(-1), a threshold voltage of 5.4 V, and an on/off current ratio of 6.5 x 10(7). (C) 2018 Elsevier B.V. All rights reserved.