Few-Layered PtS2 Phototransistor on h-BN with High Gain
Few-Layered PtS2 Phototransistor on h-BN with High Gain
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高增益 h-BN 上的少层 PtS2 光电晶体管
DOI：
10.1002/adfm.201701011
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发表时间：
2017-07-19
影响因子：
19
通讯作者：
Zhai, Tianyou
中科院分区：
文献类型：
--
作者：
Li, Liang;Wang, Weike;Zhai, Tianyou
最近重新发现的10族过渡金属二硫族化合物（TMDs），如PtS2和PtSe2，由于其理论上的高载流子迁移率，广泛可调的带隙和超稳定性，已加入2D材料家族，成为电子和光电子应用的潜在有前途的候选者。本文首次探索了以h-BN为衬底的基于低层PtS2的光电应用。光电晶体管具有高达1.56 x 10(3) A W-1的高响应性和2.9 x 10(11) Jones的探测率。此外，在栅极电压V-g = 30 V时，获得了接近2 × 10(6)的超高光增益，这是二维光电探测器中最高的增益之一，这归因于陷阱态的存在。更有趣的是，低层PtS2光电晶体管显示出一种后门调制的光电流产生机制，即通过调节栅极电压从OFF状态到ON状态，从光导效应主导到光门效应主导。PtS2的良好性能与门控光响应相结合，使其成为未来二维光电应用的有竞争力的候选材料。
The very recently rediscovered group-10 transition metal dichalcogenides (TMDs) such as PtS2 and PtSe2, have joined the 2D material family as potentially promising candidates for electronic and optoeletronic applications due to their theoretically high carrier mobility, widely tunable bandgap, and ultrastability. Here, the first exploration of optoelectronic application based on few-layered PtS2 using h-BN as substrate is presented. The phototransistor exhibits high responsivity up to 1.56 x 10(3) A W-1 and detectivity of 2.9 x 10(11) Jones. Additionally, an ultrahigh photogain approximate to 2 x 10(6) is obtained at a gate voltage V-g = 30 V, one of the highest gain among 2D photodetectors, which is attributed to the existence of trap states. More interestingly, the few-layered PtS2 phototransistor shows a back gate modulated photocurrent generation mechanism, that is, from the photoconductive effect dominant to photogating effect dominant via tuning the gate voltage from the OFF state to the ON state. Such good properties combined with gate-controlled photoresponse of PtS2 make it a competitive candidate for future 2D optoelectronic applications.