GHz frequency ZnO/Si SAW device
GHz frequency ZnO/Si SAW device
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DOI：
10.1109/tuffc.2008.662
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发表时间：
2008-02-01
影响因子：
3.6
通讯作者：
Pastureaud, Thomas
中科院分区：
文献类型：
--
作者：
Le Brizoual, Laurent;Sarry, Frederic;Pastureaud, Thomas
对高频低损耗滤波器的需求引发了对创新波导解决方案的深入研究。在这项工作中，使用经典的紫外光刻技术制造了基于 ZnO/Si 结构的 GHz SAW 器件。对压电薄膜的厚度进行了优化，并采用特定的叉指换能器结构，利用大于1微米的铝带分别产生2.5 GHz和3.5 GHz的三次谐波和五次谐波导波。借助先进的基于有限元/边界元的模型，可以测量并理论上识别不同的模式。理论与实验之间存在良好的一致性。高频模式已得到充分表征，可以准确设计利用此类模式的 SAW 器件。
The demand for high-frequency low-loss filters generates intensive research on innovative wave guide solutions. In this work, a GHz SAW device based on a ZnO/Si structure was fabricated using classical UV photolithography. The thickness of the piezoelectric thin film was optimized and a specific interdigital transducer structure was used to generate third and fifth harmonic guided waves at 2.5 GHz and 3.5 GHz, respectively, with an aluminum strip larger than 1 micrometer. Different modes have been measured and theoretically identified thanks to an advanced finite-element/boundary-element-based model. Good agreement is found between theory and experiments. The high-frequency modes have been fully characterized, allowing for accurate design of SAW devices exploiting such modes.