Heteroepitaxial diamond films on silicon (001): Interface structure and crystallographic relations between film and substrate.
Heteroepitaxial diamond films on silicon (001): Interface structure and crystallographic relations between film and substrate.
复制标题
硅上异质外延金刚石薄膜 (001)：薄膜与基底之间的界面结构和晶体学关系。
DOI：
10.1103/physrevb.52.5164
复制
发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Jiang
中科院分区：
文献类型：
--
作者：
Jia;Urban;Jiang
用高分辨电子显微镜研究了高(001)取向金刚石薄膜与硅(001)衬底之间的界面。研究发现，与衬底晶格呈一定取向关系的异质外延取向颗粒直接生长在清洁的硅表面上。观察到的大多数颗粒的基本轴与硅的基本轴平行或几乎(在几度之内)平行。此外，还观察到了围绕<110>轴旋转约14\ifmmode^\circ\Else\TextDegree\FI和70\ifmmode^\CIRC\Else\TextDegree\FI的颗粒。在后一种情况下，晶格与理想取向的非旋转颗粒的晶格呈孪生关系。在所有情况下，界面结构都被很好地定义，并且两个晶格的角偏差被适当的界面位错补偿。这些位错或者是60-ifmmode^\cic\Else\TextDegree\FI{}型位错，或者是由两种60-ifmmode^\CIRC\Else\TextDegreeFI{}位错反应形成的Lmer位错。观察到的取向关系可以用这两种材料的近符合格子来解释。
The interfaces between highly (001)-oriented diamond films and the silicon (001) substrates were investigated by high-resolution electron microscopy. It was found that heteroepitaxially oriented grains which exhibit a defined orientation relationship to the substrate lattice grow directly on the clean silicon surface. The majority of the grains observed have their basic axes parallel or almost (within a few degrees) parallel to the basic axes of silicon. In addition, grains with about 14\ifmmode^\circ\else\textdegree\fi{} and 70\ifmmode^\circ\else\textdegree\fi{} rotation around a 〈110〉 axis are also observed. In the latter case the lattice is in twin relation to that of the ideally oriented nonrotated grains. In all cases the interface structure is well defined and the angular deviation of the two lattices is compensated by appropriate interface dislocations. These dislocations are either of the 60\ifmmode^\circ\else\textdegree\fi{} type or are Lomer dislocations formed by the reaction of two types of 60\ifmmode^\circ\else\textdegree\fi{} dislocations. The observed orientation relationships can be explained on the basis of the near-coincidence-site lattice of the two materials.