Raman shifts in Si nanocrystals
Raman shifts in Si nanocrystals
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DOI：
10.1063/1.117371
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发表时间：
1996-07-08
影响因子：
4
通讯作者：
Xie, XD
中科院分区：
文献类型：
--
作者：
Zi, J;Buscher, H;Xie, XD
利用键极化率模型从理论上研究了硅纳米晶体的拉曼位移随尺寸的变化。考虑了零维球体和一维柱。建立了硅球和硅柱的拉曼位移与尺寸之间的关系，由此可以得到给定拉曼位移时硅纳米晶体的尺寸，反之亦然。(C) 1996年美国物理研究所。
Raman shifts of Si nanocrystals versus size were studied theoretically by a bond polarizability model. Zero-dimensional spheres and one-dimensional columns were considered. The relation between the Raman shift and the size for Si spheres and columns was established, from which the size of Si nanocrystals can be obtained for a given Raman shift or vice versa. (C) 1996 American Institute of Physics.