PREPARATION OF TRANSPARENT INDIUM OXIDE FILM FROM A CHEMICALLY DEPOSITED PRECURSOR
PREPARATION OF TRANSPARENT INDIUM OXIDE FILM FROM A CHEMICALLY DEPOSITED PRECURSOR
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由化学沉积前体制备透明氧化铟膜
DOI：
10.1149/1.1390689
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发表时间：
1999
影响因子：
--
通讯作者：
M. Izaki
中科院分区：
文献类型：
--
作者：
M. Izaki
通过在333 K下从含有硝酸铟和三甲基胺硼烷的水溶液中化学沉积氢氧化铟前体，并通过在473- 573 K下加热前体1小时，在非导电衬底上形成具有立方结构的氧化铟膜。氧化铟膜显示出33 μ cm的电阻率和在600 nm波长下78%的光透射率。
An indium oxide film with a cubic structure was formed on a nonconductive substrate by chemical deposition of indium hydroxide precursor from an aqueous solution containing an indium nitrate and trimethylamineborane at 333 K, and by heating the precursor at 473-573K for 1 h. The indium oxide film showed a resistivity of 33 Ω cm and an optical transmission of 78% at a wavelength of 600 nm.