Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS 2 Transistors
Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS 2 Transistors
复制标题
衬底耦合对单层MoS 2 晶体管性能和可变性的影响
DOI：
10.1109/led.2018.2883808
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发表时间：
2019
影响因子：
4.9
通讯作者：
Shahrjerdi, Davood
中科院分区：
文献类型：
--
作者：
Alharbi, Abdullah;Huang, Zhujun;Taniguchi, Takashi;Watanabe, Kenji;Shahrjerdi, Davood
研究了衬底耦合对单层mos2场效应晶体管（fet）变异性和器件特性的影响。我们的电测量结果显示，关键的FET器件指标显著改善，并且随着界面能量的降低，器件可变性显著降低。我们将观察到的器件特性的改善归因于界面阱密度的降低和带电杂质散射的抑制。本研究确立了衬底耦合对单层mos2fet的性能和可变性的关键作用。
We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS2field-effect transistors (FETs). Our electrical measurement results reveal significant improvements of key FET device metrics and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2FETs.