Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors
Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors
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DOI:
10.1063/1.1850652
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发表时间:
2005-01
影响因子:
1.6
通讯作者:
C. Dehoff;B. Rodriguez;A. Kingon;R. Nemanich;A. Gruverman;J. Cross
中科院分区:
文献类型:
--
作者:
C. Dehoff;B. Rodriguez;A. Kingon;R. Nemanich;A. Gruverman;J. Cross
This article describes an experimental setup for combined measurements of domain switching dynamics and switching currents in micrometer scale ferroelectric capacitors. The setup is based on a commercial atomic force microscope (AFM) that is equipped with a piezoresponse mode for domain imaging and with a wide bandwidth current amplifier for switching current recording. The setup allows combined domain/current measurements in capacitors as small as 1μm2 with switching times resolved down to 10ns. The incorporation of switching current measurement capability into piezoresponse AFM makes detailed analysis of switching behavior in ferroelectric memory devices possible.