ZnGa2O4:Cr3+: a new red long-lasting phosphor with high brightness

ZnGa2O4:Cr3+: a new red long-lasting phosphor with high brightness
复制标题

DOI:
10.1364/oe.19.010131
复制
发表时间:
2011-05-23
期刊:
影响因子:
3.8
通讯作者:
Gourier, Didier
Gourier, Didier
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Bessiere, Aurelie;Jacquart, Sylvaine;Gourier, Didier

文献摘要

被引文献

相似文献

ZnGa 2 O 4:Cr 3+是一种新型的亮红色紫外激发的长余辉荧光粉,由于其650 nm-750 nm的发射范围,可能适用于体内成像。光致发光和X射线激发的辐射发光显示,理想Cr ~(3+)和Cr ~(3+)的E ~(2 -)>(4)A ~(2)发射线都被相邻的反位缺陷所扭曲,而长余辉(LLP)和热释光(TSL)几乎都是通过扭曲的Cr ~(3+)产生的。最强烈的LLP获得与名义Zn缺乏,并在335 K的TSL峰有关。提出了LLP和TSL的机制,即导致Cr 3+扭曲的反位缺陷充当深陷阱。2011美国光学学会Optical Society of America
ZnGa2O4:Cr3+ is shown to be a new bright red UV excited long-lasting phosphor potentially suitable for in vivo imaging due to its 650 nm-750 nm emission range. Photoluminescence and X-ray excited radioluminescence show the E-2 -> (4)A(2) emission lines of both ideal Cr3+ and Cr3+ distorted by a neighboring antisite defect while long-lasting phosphorescence (LLP) and thermally stimulated luminescence (TSL) almost exclusively occur via distorted Cr3+. The most intense LLP is obtained with a nominal Zn deficiency and is related to a TSL peak at 335K. A mechanism for LLP and TSL is proposed, whereby the antisite defect responsible for the distortion at Cr3+ acts as a deep trap. (C)2011 Optical Society of America