Piezoresistive Response of Quasi-One-Dimensional ZnO Nanowires Using an in Situ Electromechanical Device
Piezoresistive Response of Quasi-One-Dimensional ZnO Nanowires Using an in Situ Electromechanical Device
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DOI:
10.1021/acsomega.7b00041
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发表时间:
2017-06-01
期刊:
影响因子:
4.1
通讯作者:
Mishra, Yogendra Kumar
中科院分区:
文献类型:
--
作者:
Kaps, Soeren;Bhowmick, Sanjit;Mishra, Yogendra Kumar
Quasi-one-dimensional structures from metal oxides have shown remarkable potentials with regard to their applicability in advanced technologies ranging from ultra-responsive nanoelectronic devices to advanced healthcare tools. Particularly due to the piezoresistive effects, zinc oxide (ZnO)-based nanowires showed outstanding performance in a large number of applications, including energy harvesting, flexible electronics, smart sensors, etc. In the present work, we demonstrate the versatile crystal engineering of ZnO nano-and microwires (up to centimeter length scales) by a simple flame transport process. To investigate the piezoresistive properties, particular ZnO nanowires were integrated on an electrical push-to-pull device, which enables the application of tensile strain and measurement of in situ electrical properties. The results from ZnO nanowires revealed a periodic variation in stress with respect to the applied periodic potential, which has been discussed in terms of defect relaxations.