All-epitaxial guided-mode resonance mid-wave infrared detectors
All-epitaxial guided-mode resonance mid-wave infrared detectors
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DOI：
10.1063/5.0047534
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发表时间：
2021-05-17
影响因子：
4
通讯作者：
Wasserman, D.
中科院分区：
文献类型：
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作者：
Kamboj, A.;Nordin, L.;Wasserman, D.
我们展示了全外延导模共振中波红外（MWIR）II型超晶格nBn光电探测器。我们的探测器由高折射率吸收体/波导层组成，该层生长在重掺杂（n（++））层上方，因此是低折射率半导体层，并且生长在高折射率和宽带隙光栅图案化层下方。偏振和角度相关的探测器响应的实验测量和数值模拟，显示出强烈增强的吸收，相比，未图案化的探测器，在与耦合到导模共振在我们制造的探测器的波长。该探测器具有很高的工作温度（T = 200 K）的外量子效率超过50%的TE偏振光的吸收体厚度仅为250 nm（类似于λ（O）/20）。我们计算出T = 200 K时我们的探测器的估计比探测率，共振时，类似于4 × 10（10）cm Hz（1/2）W-1，与最先进的MWIR探测器相当。所提出的结果提供了一种方法，单片，全外延集成的红外探测器架构与谐振光学腔增强整个中波红外探测器的响应。由AIP Publishing独家授权出版。
We demonstrate all-epitaxial guided-mode resonance mid-wave infrared (MWIR) type-II superlattice nBn photodetectors. Our detectors consist of a high-index absorber/waveguide layer grown above a heavily doped (n(++)), and thus, low-index, semiconductor layer, and below a high-index and wide-bandgap grating-patterned layer. Polarization- and angle-dependent detector response is measured experimentally and simulated numerically, showing strongly enhanced absorption, compared to unpatterned detectors, at wavelengths associated with coupling to guided-mode resonances in our fabricated detectors. The detectors show high operating temperature (T = 200 K) external quantum efficiencies over 50% for TE-polarized light with absorber thickness of only 250 nm (similar to lambda(o)/20). We calculate T = 200 K estimated specific detectivity for our detectors, on resonance, of similar to 4 x 10(10) cm Hz(1/2) W-1, comparable with state-of-the-art MWIR detectors. The presented results offer an approach to monolithic, all-epitaxial integration of IR detector architectures with resonant optical cavities for enhanced detector response across the mid-wave infrared. Published under an exclusive license by AIP Publishing.