Structure and band gap tuning of transparent (Ba1−xSrx)SnO3 thin films epitaxially grown on MgO substrates
Structure and band gap tuning of transparent (Ba1−xSrx)SnO3 thin films epitaxially grown on MgO substrates
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MgO 衬底上外延生长的透明 (Ba1−xSrx)SnO3 薄膜的结构和带隙调节
DOI：
10.1209/0295-5075/98/47010
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
J. Dai
中科院分区：
文献类型：
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作者：
Qinzhuang Liu;Bing Li;Jianjun Liu;Hong Li;Zhongliang Liu;Kai Dai;Guangping Zhu;Peng Zhang;Feng Chen;J. Dai
通过脉冲激光沉积在 MgO 基底上外延生长 (Ba1-xSrx)SnO3 (x=0–1) (BSSO) 薄膜。 X 射线衍射、原子力显微镜和光学透射率研究表明，通过改变 Sr 含量可以显着改变 BSSO 薄膜的晶格和能带结构特性。随着薄膜中Sr含量从0增加到1，晶格参数逐渐从4.123 Å减小到4.037 Å，而光学带隙能量从3.50 eV线性增加到4.27 eV，这归因于八面体倾斜畸变推高了导带最小值。 BSSO 薄膜的这种大结构和带隙调节有望在薄膜结构中得到所需的应用。
(Ba1-xSrx)SnO3 (x=0–1) (BSSO) films were epitaxially grown on MgO substrates by pulsed laser deposition. X-ray diffraction, atomic force microcopy, and optical transmittance investigations reveal that the lattice and band structure properties of the BSSO films can be modified significantly by changing the Sr content. With increasing Sr content from 0 to 1 in films, the lattice parameters decrease from 4.123 to 4.037 Å gradually, while the optical band gaps energy increases from 3.50 to 4.27 eV linearly, which was attributed to the octahedral tilting distortion pushing up the minimum of conduction band. This large structure and band gap tuning of BSSO films are promising for desired applications in the thin-film architecture.