Reaction control of tetraethyl orthosilicate (TEOS)/O3 and tetramethyl orthosilicate (TMOS)/O3 counter diffusion chemical vapour deposition for preparation of molecular-sieve membranes
Reaction control of tetraethyl orthosilicate (TEOS)/O3 and tetramethyl orthosilicate (TMOS)/O3 counter diffusion chemical vapour deposition for preparation of molecular-sieve membranes
复制标题
原硅酸四乙酯（TEOS）/O3 和原硅酸四甲酯（TMOS）/O3 反扩散化学气相沉积的反应控制用于制备分子筛膜
DOI：
--
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
Q—Shin
中科院分区：
文献类型：
--
作者：
Takeo Yamaguchi;Xin Ying;Yasuhiko Tokimasa;B. N. Nair;T. Sugawara;Q—Shin
计数器
扩散化学气相沉积（CVD）是制备无机薄膜或膜的极好方法
在多孔或无孔载体的表面上。多孔载体孔径的改性
这种制备分子筛膜的方法是另一个令人感兴趣的机会。然而，控制沉积
由于复杂的反应动力学，该曲线非常困难。在这项研究中，
研究了正硅酸乙酯（TEOS）/O3和正硅酸四甲酯（TMOS）/O3体系的热稳定性。
为了控制薄多孔陶瓷基板中的沉积层轮廓，进行反应序列的数值模拟。通过改变反应物浓度和温度来控制沉积
轮廓，并将模拟结果与实验结果进行了比较。结果表明，高
可以在优化的反应条件下加工高质量的膜。此外，阶梯覆盖的效果
最后的CVD反应
膜性能
还研究
通过比较TEOS/O3和TMOS/O3反应。
Counter
diffusion chemical vapour deposition (CVD) is an excellent way to prepare inorganic thin films or membranes
on the surface of porous or non-porous supports. Modification of the pore size of porous supports by
this method to prepare molecular-sieve membranes is another interesting opportunity. However, control of the deposition
profile is very difficult because of the complex reaction kinetics. In this study, counter diffusion CVD
of tetraethyl orthosilicate (TEOS)/O3 or tetramethyl orthosilicate (TMOS)/O3 systems was investigated.
To control the deposition layer profile in a thin porous ceramic substrate, numerical simulations of the reaction sequences were performed. The reactant concentration and temperature were varied to control the deposition
profile, and the simulation results were compared with experimental results. It is shown that high
quality membranes can be processed under the optimised reaction conditions. In addition, the effect of step-coverage
of the CVD reaction on final
membrane performance
was also investigated
by comparison of the TEOS/O3 and TMOS/O3 reactions.