EMISSION CHARACTERISTICS OF METAL-OXIDE SEMICONDUCTOR ELECTRON-TUNNELING CATHODE
EMISSION CHARACTERISTICS OF METAL-OXIDE SEMICONDUCTOR ELECTRON-TUNNELING CATHODE
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DOI：
10.1116/1.586877
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发表时间：
1993-03-01
影响因子：
1.4
通讯作者：
ONO, S
中科院分区：
文献类型：
--
作者：
YOKOO, K;TANAKA, H;ONO, S
利用超薄SiO2制备了金属氧化物半导体（MOS）电子隧道阴极，并对其发射特性进行了研究。我们发现，电子隧穿MOS二极管的势垒时，发射发生在整个栅极区域，发射电流为流过二极管的总电流的0.7%。人们还发现，这种辐射几乎不受压力的影响。
We have fabricated a metal-oxide-semiconductor (MOS) electron tunneling cathode with ultrathin SiO2 and examined the emission characteristics. We found that the emission occurred from an entire gate area by electron tunneling through the potential barrier in the MOS diode and the emission current was 0.7% of the total current flowing through the diode. The emission was also found to be nearly independent of pressure.