Read/write characteristics of a Ba-ferrite sputtered disk
Read/write characteristics of a Ba-ferrite sputtered disk
复制标题
钡铁氧体溅射磁盘的读/写特性
DOI：
10.1109/tmag.1987.1065726
复制
发表时间：
1987
影响因子：
2.1
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
A. Morisako;M. Matsumoto;M. Naoe
用射频二极管溅射法制备了具有不同c轴色散角Δθ 50和不同膜厚的钡铁氧体薄膜硬磁盘。用锰锌铁氧体环形磁头对钡铁氧体磁盘的读写特性进行了测试。再现的孤立磁化转变波形显示双脉冲和双脉冲比依赖于记录电流。双脉冲比随记录电流的增大而减小。PW 50（低密度下再现输出半高处的脉宽）和λ 50（D50处的记录波长）取决于钡铁氧体薄膜的Δθ 50，PW 50和λ 50均随Δθ 50的增大而增大。在40 kfrpi的2F下，获得了-31dB的重写比。Δθ 50为2.5 ° ~ 2.8°的圆盘的D50与膜厚有关。对于厚度为0.26 μm、0.16 μ m和0.066 μm的磁头，其D50分别为88、95和100 kfrpi。
Ba-ferrite thin film rigid disks with various c-axis dispersion angle Δθ 50 and various film thickness have been prepared by rf diode sputtering. Read/write characteristics of Ba-ferrite disks were evaluated by means of ring type Mn-Zn ferrite head. Reproduced wave forms of isolated magnetization transition showed dipulse and dipulse ratio depended on recording current. Dipulse ratio decreased with increase of recording current. PW 50 ( pulse width at half height of reproduced output at low density ) and λ 50 ( recorded wave length at D 50 )depended on Δθ 50 of Ba-ferrite thin film and both PW 50 and λ 50 increased with increase of Δθ 50 . Over-write ratio of -31dB has been obtained at 2F of 40 kfrpi. D 50 of disks with Δθ 50 of 2.5∼2.8° depended on the film thickness. 88, 95 and 100 kfrpi in D 50 for the thickness of 0.26, 0.16 and 0.066 μm, respectively, have been ontained with a head with gap length of 0.4 μm.