Unique characteristics of nonequilibrium carrier transport dynamics in an undoped GaAs/n-type GaAs epitaxial structure
Unique characteristics of nonequilibrium carrier transport dynamics in an undoped GaAs/n-type GaAs epitaxial structure
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DOI：
10.7567/apex.9.071001
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发表时间：
2016-06
影响因子：
2.3
通讯作者：
T. Hasegawa;M. Nakayama
中科院分区：
文献类型：
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作者：
T. Hasegawa;M. Nakayama
利用不同泵浦光子能量下的反射型泵浦探测光谱和蒙特卡罗模拟，研究了室温下非掺杂GaAsn型外延结构中的非平衡载流子动力学。结果表明，光生电子在非掺杂层中的输运过程表现为通过非掺杂层的准弹道运动和从Γ谷到L谷的谷间散射之间的价态，这是光生电子过剩能量的函数。Γ-L散射分量呈现阈值状，然后随着过剩能量的增加而逐渐增大。
We have investigated nonequilibrium carrier dynamics in an undoped GaAs/n-type GaAs epitaxial structure at room temperature using reflection-type pump–probe spectroscopy at different pump photon energies and Monte Carlo simulation. It was found that the transport process of photogenerated electrons in the undoped layer is characterized by the valance between the quasiballistic motion passing through the undoped layer and the intervalley scattering from the Γ valley to the L one as a function of the excess energy of photogenerated electrons. The Γ–L scattering component exhibits threshold-like appearance and then gradually increases with increasing excess energy.