High-rate sputtering of thick PZT thin films for MEMS
High-rate sputtering of thick PZT thin films for MEMS
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DOI：
10.1007/s10832-010-9615-6
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发表时间：
2010-10-01
影响因子：
1.7
通讯作者：
Jung, Thomas
中科院分区：
文献类型：
--
作者：
Jacobsen, Harald;Prume, Klaus;Jung, Thomas
采用一种新型的高速溅射工艺在硅基片上成功地沉积了厚度为5 μ m ~ 10 μ m的无裂纹、无空隙的多晶锆钛酸铅（PZT）薄膜。溅射的PZT层显示出介于1，000和1，800之间的高介电常数epsilon（r），以及在f = 1 kHz下测量的中等损耗因子tan（delta）= 0，002-aEuro ppm 0，01，一个明显的铁电电滞回线，具有17 A μ C/cm（2）的反射极化和5.4 kV/cm（2）的矫顽场强。压电系数d（33，f）= 80 pm/V通过使用双光束激光干涉仪（DBLI）测量。在此基础上，制备了以SOI层和溅射PZT薄膜为主体的薄膜驱动器。用白色光干涉仪测量了这种薄膜致动器的偏转，并将其与有限元分析（FEA）的结果进行了比较。用这种方法计算出的横向压电系数约为e（31）= -11.2 C/m（2），而模型中的所有其他材料参数都来自PZT-5A。
Crack and void free polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 5 A mu m to 10 A mu m have been successfully deposited on silicon substrates using a novel high rate sputtering process. The sputtered PZT layers show a high dielectric constant epsilon(r) between 1,000 and 1,800 with a moderate dissipation factor tan (delta) = 0,002 -aEuro parts per thousand 0,01 measured at f = 1 kHz, a distinct ferroelectric hysteresis loop with a remanent polarisation of 17 A mu C/cm(2) and coercive field strength of 5.4 kV/mm. The piezoelectric coefficients d(33,f) = 80 pm/V are measured by using a Double Beam Laser Interferometer (DBLI). Based on this deposition process a membrane actuator mainly consisting of a SOI layer and a sputtered PZT thin film was prepared. The deflection of this membrane actuator depending on the driving voltage was measured with a white light interferometer and compared to the results of finite element analysis (FEA). With this approach a transverse piezoelectric coefficient of about e(31) = -11.2 C/m(2) was calculated, whereas all the other material parameters in the model were lent from PZT-5A.