Molecular dynamics simulation of AlN thin films under nanoindentation
Molecular dynamics simulation of AlN thin films under nanoindentation
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纳米压痕下AlN薄膜的分子动力学模拟
DOI:
10.1016/j.ceramint.2016.11.218
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发表时间:
2017-04
影响因子:
5.2
通讯作者:
Peng XH
中科院分区:
文献类型:
--
作者:
Xiang Henggao;Li Haitao;Fu Tao;Zhao Yinbo;Huang Cheng;Zhang Gang;Peng Xianghe;Li Haitao;Peng Xianghe;Li HT;Peng XH
A large-scale molecular dynamics (MD) simulation of nanoindentation was performed to study the structural deformation on wurtzite aluminum nitride (B4-AlN). The nanoindentation induced B4-B1 phase-transition, amorphization and dislocation glide in AlN (0001) thin films were found. It shows that the B4-B1 phase-transition path includes two processes: an anti-parallel vertical movement of N and Al atoms along the [0001] axis, followed by horizontal rearrangements of the two types of atoms. Indentation force-depth (P-h) curve shows minor and major pop-in events. Detailed analysis of the results shows that the first three minor load drops in theP-hcurve are related to the nucleation of amorphous structure, whereas the subsequent major load drop is related to the dislocation nucleation and expansion. The dislocations in AlN thin film involve perfect dislocations and Shockley partial dislocations, the latter is associated with the formation of intrinsic stacking faults (SFs) typeI2during the expansion of dislocation loops.
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DOI:
10.1016/j.physe.2015.08.020
发表时间:
2015-11
影响因子:
3.3
作者:
Yinbo Zhao;Xianghe Peng;T. Fu;Rong Sun;Chao Feng;Zhongchang Wang
通讯作者:
Yinbo Zhao;Xianghe Peng;T. Fu;Rong Sun;Chao Feng;Zhongchang Wang
影响因子:
19
作者:
Y. Zhang;X. Han;K. Zheng;Z. Zhang;X. Zhang;J. Fu;Y. Ji;Y. Hao;X. Guo;Z. Wang
通讯作者:
Y. Zhang;X. Han;K. Zheng;Z. Zhang;X. Zhang;J. Fu;Y. Ji;Y. Hao;X. Guo;Z. Wang
影响因子:
4
作者:
M. Ganji;Z. Dalirandeh;M. Khorasani
通讯作者:
M. Ganji;Z. Dalirandeh;M. Khorasani
影响因子:
3.7
作者:
SCHNEIDER, T;STOLL, E
通讯作者:
STOLL, E
影响因子:
4
作者:
Yu, Qian;Li, Suzhi;Ma, Evan
通讯作者:
Ma, Evan