RAMAN STUDIES OF VITREOUS SIO2 VERSUS FICTIVE TEMPERATURE
RAMAN STUDIES OF VITREOUS SIO2 VERSUS FICTIVE TEMPERATURE
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DOI：
10.1103/physrevb.28.3266
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发表时间：
1983-01-01
影响因子：
3.7
通讯作者：
GALEENER, FL
中科院分区：
文献类型：
--
作者：
GEISSBERGER, AE;GALEENER, FL
研究了玻璃态SiO2的一级拉曼光谱与样品假想温度T_F的关系（900 ℃ ≤ T_F≤ 1550 ℃）。我们观察到了三个现象：（1）与v− Si O 2的连续随机网络相关的振动的广泛特征在频率上发生了偏移，其方式与平均Si-O-Si角θ的减小所导致的致密化一致;（2）在492和606 cm− 1处的尖锐”缺陷”线显示频率偏移很小或没有偏移;（3）两种缺陷线强度均表现为Arrhenius行为，exp（-Δ Ek B T F），其激活能Δ E分别为0.14和0.40 eV。这些意见解释使用中心力网络动力学模型和平面三倍和定期四倍环缺陷的数量的变化。
The first-order Raman spectra of vitreous Si O 2 have been studied as a function of sample fictive temperature T F for 900 C≤ T F≤ 1550 C. Three observations were made:(1) The broad features assigned to vibrations associated with the continuous random network of v− Si O 2 shift in frequency in a manner consistent with densification by reduction of the average Si-O-Si angle θ;(2) the sharp" defect" lines at 492 and 606 cm− 1 show little or no shift in frequency;(3) both defect line intensities exhibit Arrhenius behavior, exp (− Δ E k B T F), with well-defined activation energies Δ E of 0.14 and 0.40 eV, respectively. These observations are interpreted using a central-force network dynamics model and changes in the number of planar threefold and regular fourfold ring defects.