Negative Ion of Boron: An Experimental Study of the 3 P Ground State
Negative Ion of Boron: An Experimental Study of the 3 P Ground State
复制标题
DOI：
10.1103/physrevlett.80.2562
复制
发表时间：
1998-03
影响因子：
8.6
通讯作者：
M. Scheer;R. Bilodeau;H. Haugen
中科院分区：
文献类型：
--
作者：
M. Scheer;R. Bilodeau;H. Haugen
一项调查 ${\mathrm{B}}^{\ensuremath{-}}({2p}^{2}{}^{3}{P}_{J})\ensurema th{\rightarrow}\mathrm{B}(2p{}^{2}{P}_{{J}^{\ensuremath{'}}})$ 使用可调谐红外激光源的光脱离阈值已经获得了硼电子亲和力的显着改善值以及关于离子基态精细结构的第一个实验数据。 $J\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0\char21{}1$ 和 $J\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1\char21{}2$ 分裂结果为 $3.23(15){\mathrm{cm}}^{\ensuremath{-}1}$ 且 $5.18(15){\mathrm{cm}}^{\ensuremath{-}1}$ 分别为 $2256.12(20){\mathrm{cm}}^{\ensuremath{-}1}$ [(279.723(25) meV]。电子的当前结果 亲和力是第一个挑战该系统广泛且有争议的理论研究的人。
An investigation of the ${\mathrm{B}}^{\ensuremath{-}}({2p}^{2}{}^{3}{P}_{J})\ensuremath{\rightarrow}\mathrm{B}(2p{}^{2}{P}_{{J}^{\ensuremath{'}}})$ photodetachment thresholds using a tunable infrared laser source has yielded a substantially improved value for the electron affinity of boron and the first experimental data on the fine structure of the ionic ground state. The $J\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0\char21{}1$ and $J\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1\char21{}2$ splittings are found to be $3.23(15){\mathrm{cm}}^{\ensuremath{-}1}$ and $5.18(15){\mathrm{cm}}^{\ensuremath{-}1}$, respectively, and the electron affinity is determined to be $2256.12(20){\mathrm{cm}}^{\ensuremath{-}1}$ [(279.723(25) meV]. The present result for the electron affinity is the first to challenge the extensive and controversial theoretical studies of this system.