Reconfigurable single-material Peltier effect using magnetic-phase junctions.

Reconfigurable single-material Peltier effect using magnetic-phase junctions.
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使用磁相结的可重构单一材料珀耳帖效应。

DOI:
10.1038/s41598-021-03754-2
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发表时间:
2021-12-20
期刊:
影响因子:
4.6
通讯作者:
Shiomi Y
Shiomi Y
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Nakagawa K;Yokouchi T;Shiomi Y

文献摘要

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相似文献

珀尔帖效应是在两种不同材料的结合处产生热流的一种效应,它已经成为利用电手段加热和冷却的一项重要技术。Peltier装置具有清洁、静音、紧凑、灵活、可靠、高效等优点,但不可避免地需要相对复杂的模块化结构,导致其成本高于常用的制冷技术。在这里,我们提供了一个由单一磁性材料组成的珀尔帖装置的概念,该材料具有一阶磁跃迁。我们的概念是基于一个可控的结结构,由两个具有相反珀耳帖系数的磁相组成,而不是半导体结。利用铁磁态(FI)和反铁磁态(AF)之间具有一阶磁跃迁的样品,通过脉冲加热方法成功制备了AF/FI/AF的稳定结结构,并获得了最大珀尔帖系数0.58 mV。基于有限元法的数值模拟进一步验证了我们的器件概念。本文报道的单材料珀尔帖效应避免了涉及材料结的复杂器件设计,并且具有重要的可重构性。
Peltier effects, which produce a heat flux at the junction of two different materials, have been an important technology for heating and cooling by electrical means. Whereas Peltier devices have advantages such as cleanliness, silence, compactness, flexibility, reliability, and efficiency, relatively complicated modular structures are unavoidable, leading to a higher cost than that of commonly used refrigeration technology. Here, we provide a concept of a Peltier device composed of a single magnetic material exhibiting a first-order magnetic transition. Our concept is based on a controllable junction structure consisting of two magnetic phases with opposite Peltier coefficients instead of a semiconductor junction. Using samples with the first-order magnetic transition between ferrimagnetic (FI) and antiferromagnetic (AF) states, we successfully made a stable junction structure of AF/FI/AF by a pulse heating method and achieved a maximum Peltier coefficient of 0.58 mV. Our device concept was further verified by a numerical simulation based on a finite element method. The single-material Peltier effect reported here avoids a complex device design involving material junctions and is importantly reconfigurable.