Fabrication of a superconducting MEM shunt switch for RF applications
Fabrication of a superconducting MEM shunt switch for RF applications
复制标题
制造用于射频应用的超导 MEM 并联开关
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
G. Larkins
中科院分区：
文献类型：
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作者：
Y. Hijazi;D. Hanna;D. Fairweather;Y. Vlasov;G. Larkins
我们开发了一种超导微机电（MEM）并联开关的制造工艺。该开关的设计已被优化使用Sonnet模拟。该开关由YBa/sub 2/Cu/sub 3/O/sub 7/共面波导（CPW）传输线组成，该传输线具有锚定在地平面处的金膜桥，并且悬置在覆盖有BaTiO/sub 3/的中心导体的区域上方。在施加的电场下，该膜桥向下致动并将RF信号分流到地。当电场被移除时，膜恢复其原始形状。在向上位置，器件在直流至900 MHz范围内的s/sub 21/插入损耗小于0.25 dB（其中大部分是辐射损耗造成的）。在向下位置，相同频率范围内的s/sub 21/损耗大于30 dB。
We have developed a fabrication process for a superconducting MicroElectroMechanical (MEM) shunt switch. The design of the switch has been optimized using Sonnet simulations. The switch consists of a YBa/sub 2/Cu/sub 3/O/sub 7/ Coplanar Waveguide (CPW) transmission line with a gold membrane bridge anchored at the ground planes and suspended above an area of the center conductor covered with BaTiO/sub 3/. Under an applied electric field this membrane bridge actuates downwards and shunts the RF signal to ground. The membrane returns to its original shape when the electric field is removed. In the up position the device exhibits an s/sub 21/ insertion loss of less than 0.25 dB from dc through 900 MHz (most of which is due to radiated loss). In the down position the s/sub 21/ loss in the same frequency range is greater than 30 dB.