On-chip magnetic cooling of a nanoelectronic device.
On-chip magnetic cooling of a nanoelectronic device.
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DOI：
10.1038/srep45566
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发表时间：
2017-04-04
影响因子：
4.6
通讯作者：
Roschier L
中科院分区：
文献类型：
--
作者：
Bradley DI;Guénault AM;Gunnarsson D;Haley RP;Holt S;Jones AT;Pashkin YA;Penttilä J;Prance JR;Prunnila M;Roschier L
我们证明了显着的冷却的电子在纳米结构低于10 mK的硅芯片上的薄膜铜的退磁。我们的方法克服了弱电子-声子散射的典型瓶颈，通过将电子直接耦合到冷冻核浴中，而不是通过宿主晶格中的声子冷却。因此，弱的电子-声子散射成为一种优势。它允许电子在实验上有用的时间段内被冷却到比稀释制冷机平台、输入电连接和主晶格更冷的温度。全世界都在努力使纳米结构中的电子温度达到亚毫开尔文，以研究相干电子现象并改善纳米电子器件的操作。片上磁冷却是一种很有前途的方法，以满足这一挑战。该方法可用于在其他纳米结构中达到低的局部电子温度，从而无需调整传统的大型退磁阶段。我们证明了该技术，将其应用到一个纳米电子的主要温度计，测量其内部的电子温度。使用优化的退磁过程中，我们展示了冷却的芯片上的电子从9 mK到低于5 mK超过1000秒。
We demonstrate significant cooling of electrons in a nanostructure below 10 mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottleneck of weak electron-phonon scattering by coupling the electrons directly to a bath of refrigerated nuclei, rather than cooling via phonons in the host lattice. Consequently, weak electron-phonon scattering becomes an advant- age. It allows the electrons to be cooled for an experimentally useful period of time to temperatures colder than the dilution refrigerator platform, the incoming electrical connections, and the host lattice. There are efforts worldwide to reach sub-millikelvin electron temperatures in nanostructures to study coherent electronic phenomena and improve the operation of nanoelectronic devices. On-chip magnetic cooling is a promising approach to meet this challenge. The method can be used to reach low, local electron temperatures in other nanostructures, obviating the need to adapt traditional, large demagnetisation stages. We demonstrate the technique by applying it to a nanoelectronic primary thermometer that measures its internal electron temperature. Using an optimised demagnetisation process, we demonstrate cooling of the on-chip electrons from 9 mK to below 5 mK for over 1000 seconds.