Two-step room temperature grain growth in electroplated copper
Two-step room temperature grain growth in electroplated copper
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DOI：
10.1063/1.371272
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发表时间：
1999-10-01
影响因子：
3.2
通讯作者：
Maex, K
中科院分区：
文献类型：
--
作者：
Brongersma, SH;Richard, E;Maex, K
在室温下，电镀铜在片电阻、应力和微观结构方面表现出一些惊人的变化。这种行为，现在被称为自退火，在这里被证明与镀液的组成以及由此产生的Cu层中有机添加剂的掺入密切相关。它们的加入是发生自退火的必要条件，但在较高浓度下会减慢过程。这一现象还与薄膜厚度密切相关，当薄膜厚度增加时，转变速度加快。这种依赖性可以用沉积后从上表面向下的一次快速结晶来解释，随后是一个较慢的侧向再结晶，产生较大的二次晶粒。在再结晶过程中，应力和薄片阻力被确定为两个不相关的变量。(C) 1999年美国物理研究所。[s0021 - 8979(99) 07619 - 7]。
Electroplated copper exhibits some surprising changes at room temperature in sheet resistance, stress, and microstructure. This behavior, now known as self-annealing, is shown here to be intimately linked to the composition of the plating bath and the resulting incorporation of organic additives in the Cu layer. Their addition is a necessary condition for self-annealing to occur, but slows down the process for higher concentrations. The phenomenon also depends critically on film thickness, showing an accelerated transformation when film thickness increases. This dependence is explained in terms of a very rapid primary crystallization from the top surface down just after deposition, followed by a slower lateral recrystallization producing large secondary grains. The stress and sheet resistance during recrystallization are identified as two noncorrelated variables. (C) 1999 American Institute of Physics. [S0021-8979(99)07619-7].