Low-frequency Raman modes and electronic excitations in atomically thin MoS2 films
Low-frequency Raman modes and electronic excitations in atomically thin MoS2 films
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DOI：
10.1103/physrevb.86.241301
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发表时间：
2012-09
影响因子：
3.7
通讯作者：
H. Zeng;Bairen Zhu;Kai Liu;Jiahe Fan;X. Cui;Qian Zhang
中科院分区：
文献类型：
--
作者：
H. Zeng;Bairen Zhu;Kai Liu;Jiahe Fan;X. Cui;Qian Zhang
2 g。后者被区分为压缩振动模式，类似于其他外延薄膜的表面振动。这两种模式随厚度的相反演变证明了原子薄晶体中的振动模式，以及更精确地表征原子薄MoS2薄膜厚度的方法。此外，我们观察到38 cm−1 （5 meV）左右的宽特征，该特征仅在近共振激发下可见，并且固定在固定能量下，与厚度无关。我们将这一特征解释为电子拉曼散射与自旋轨道耦合引起的布里渊区K点导带分裂有关。
2g . The latter is distinguished as the compression vibrational mode, similar to the surface vibration of other epitaxial thin films. The opposite evolution of the two modes with thickness demonstrates vibrational modes in an atomically thin crystal as well as a more precise way to characterize the thickness of atomically thin MoS2 films. In addition, we observe a broad feature around 38 cm −1 (5 meV) which is visible only under near-resonance excitation and pinned at a fixed energy, independent of thickness. We interpret the feature as an electronic Raman scattering associated with the spin-orbit coupling induced splitting in a conduction band at K points in their Brillouin zone.