Local gate effect of mechanically deformed crossed carbon nanotube junction.
Local gate effect of mechanically deformed crossed carbon nanotube junction.
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DOI：
10.1021/nl103084j
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发表时间：
2010-10
期刊：
影响因子：
10.8
通讯作者：
Q. Qing;D. Nezich;J. Kong;Zhongyun Wu;Zhongfan Liu
中科院分区：
文献类型：
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作者：
Q. Qing;D. Nezich;J. Kong;Zhongyun Wu;Zhongfan Liu
在这项工作中，我们已经证明，在交叉碳纳米管（CNT）结的局部变形可以引入显着的可调局部门效应在周围环境下。原子力显微镜（AFM）操纵的局部变形产生的变化，保留在删除AFM针尖后，保留的。施加大的源极-漏极电压和将CNT结压到阈值压力以上可以分别可逆地擦除和恢复PMOS调制。局部栅极效应被发现是独立的交叉CNT的长度和归因于电荷驻留在变形的结由于形成局域态。局域电荷的数目估计在10（2）至10（3）的范围内。这些结果可能会发现在机电传感器的潜在应用，并可能有重要的影响，设计基于交叉碳纳米管结的非易失性器件。
In this work, we have demonstrated that the local deformation at the crossed carbon nanotube (CNT) junctions can introduce significant tunable local gate effect under ambient environment. Atomic force microscope (AFM) manipulation of the local deformation yielded a variation in transconductance that was retained after removing the AFM tip. Application of a large source-drain voltage and pressing the CNT junction above a threshold pressure can respectively erase and recover the transconductance modulation reversibly. The local gate effect is found to be independent of the length of the crossed CNT and attributed to the charges residing at the deformed junctions due to formation of localized states. The number of localized charges is estimated to be in the range of 10(2) to 10(3). These results may find potential applications in electromechanical sensors and could have important implications for designing nonvolatile devices based on crossed CNT junctions.