Ni 2 P‐Modified Ta 3 N 5 and TaON for Photocatalytic Nitrate Reduction
Ni 2 P‐Modified Ta 3 N 5 and TaON for Photocatalytic Nitrate Reduction
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DOI：
10.1002/cnma.202000174
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发表时间：
2020-08
期刊：
影响因子：
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通讯作者：
Lin Wei;Marquix A. S. Adamson;J. Vela
中科院分区：
文献类型：
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作者：
Lin Wei;Marquix A. S. Adamson;J. Vela
自持型光催化NO - 3还原系统可能成为理想的NO - 3去除方法。开发高效、高活性的光催化剂是光催化还原no3‐的关键。在这项工作中，我们提出了Ni 2p‐修饰的ta3n5 (Ni 2p / ta3n5), TaON （Ni 2p /TaON）和tio2 （Ni 2p / tio2）的合成。在2 mM （28 g/mL NO 3‐N）水溶液中，在419 nm光下，Ni 2p /Ta 3n 5和Ni 2p /TaON在12 h内的NO 3‐转化率分别高达79%和61%，对应于每克196 μmol g‐1 h‐1和153 μmol g‐1 h‐1的反应速率，表观量子产率为3 - 4%。由于可见光有源半导体（SC）衬底ta3n5和TaON，与ni2p / tio2中no3‐转化率为24%相比，ni2p / ta3n5和ni2p /TaON表现出更高的活性。我们还讨论了Ni - 2p /半导体异质结构中两种可能的电子迁移途径。我们的实验结果表明，在这些材料中有一个主要的电子迁移途径，即：光产生的电子从半导体迁移到共催化剂Ni 2p，并提高其费米能级。较高的费米能级提供了更大的驱动力，并允许在Ni 2p表面上发生no3‐还原。
Self‐sustaining photocatalytic NO 3 ‐ reduction systems could become ideal NO 3 ‐ removal methods. Developing an efficient, highly active photocatalyst is the key to the photocatalytic reduction of NO 3 ‐ . In this work, we present the synthesis of Ni 2 P‐modified Ta 3 N 5 (Ni 2 P/Ta 3 N 5 ), TaON (Ni 2 P/TaON), and TiO 2 (Ni 2 P/TiO 2 ). Starting with a 2 mM (28 g/mL NO 3 ‐ ‐N) aqueous solution of NO 3 ‐ , as made Ni 2 P/Ta 3 N 5 and Ni 2 P/TaON display as high as 79% and 61% NO 3 ‐ conversion under 419 nm light within 12 h, which correspond to reaction rates per gram of 196 μmol g ‐1 h ‐1 and 153 μmol g ‐1 h ‐1 , respectively, and apparent quantum yields of 3–4%. Compared to 24% NO 3 ‐ conversion in Ni 2 P/TiO 2 , Ni 2 P/Ta 3 N 5 and Ni 2 P/TaON exhibit higher activities due to the visible light active semiconductor (SC) substrates Ta 3 N 5 and TaON. We also discuss two possible electron migration pathways in Ni 2 P/ semiconductor heterostructures. Our experimental results suggest one dominant electron migration pathway in these materials, namely: Photo‐generated electrons migrate from the semiconductor to co‐catalyst Ni 2 P, and upshift its Fermi level. The higher Fermi level provides greater driving force and allows NO 3 ‐ reduction to occur on the Ni 2 P surface.