Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
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低阈值 - 14 W/mm ZrO2/AlGaN/GaN 金属氧化物半导体异质结构场效应晶体管
DOI：
10.1143/jjap.45.4985
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发表时间：
2006
影响因子：
1.5
通讯作者：
Muhammad Asif Khan
中科院分区：
文献类型：
--
作者：
Shiva Rai;V. Adivarahan;N. Tipirneni;A. Koudymov;Jinwei Yang;G. Simin;Muhammad Asif Khan
我们首次报道了以二氧化锆为栅介质的低阈值AlGaN/GaN金属氧化物半导体异质结场效应晶体管（MOSHFET）的RF性能。栅漏电流为5×10- 7A/mm ~ 2，阈值电压仅比HFET高1V。这些器件在2GHz的射频功率为14.32 W/mm，在50 V的漏极偏压。
We report for the first time on the RF performance of a low-threshold AlGaN/GaN metal–oxide–semiconductor heterostructure field transistor (MOSHFET) with zirconium dioxide as the gate dielectric. Low gate leakage current of 5×10-7 A/mm2 and a threshold voltage which was only 1 V higher than that of an HFET were achieved. The RF power of these devices at 2 GHz was 14.32 W/mm at 50 V drain bias.