Tunneling Current Induced Frequency Dispersion in the C-V Behavior of Ultra-Thin Oxide MOS Capacitors
Tunneling Current Induced Frequency Dispersion in the C-V Behavior of Ultra-Thin Oxide MOS Capacitors
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DOI：
10.1149/06905.0243ecst
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发表时间：
2015-09
期刊：
影响因子：
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通讯作者：
Chang-Feng Yang;J. Hwu
中科院分区：
文献类型：
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作者：
Chang-Feng Yang;J. Hwu
Huge frequency dispersion appears in the capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor capacitors (MOSCAPs) in depletion bias region especially when the oxide thickness is extremely small. The low frequency C-V curves have large capacitance value and behave as a peak at depletion bias. By using TCAD simulation, it was proven that the tunneling effect which is significant in thin oxide MOSCAPs plays an important role for the contribution of the frequency dispersion. The conventional theory of interface traps density is not the only cause of frequency dispersion. Consequently, extraction of interface traps density by the conventional high-low frequency method will introduce misleading error of interface property in ultra-thin oxide MOS devices.
