Atomically resolved structure of InAs quantum dots
Atomically resolved structure of InAs quantum dots
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DOI：
10.1063/1.1365101
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发表时间：
2001-04-15
影响因子：
4
通讯作者：
Jacobi, K
中科院分区：
文献类型：
--
作者：
Márquez, J;Geelhaar, L;Jacobi, K
采用分子束外延技术在GaAs(001)衬底上生长InAs，直至形成量子点。此时，生长被中断，未被覆盖的量子点被扫描隧道显微镜(STM)原位观察。原子分辨的量子点STILI图像显示，出现了四个主要的束缚面，其Miller指数为{137}。小面取向的确定是基于对平面高米勒指数GaAs面的实验确定的。此外，后者的实验表明，(137)面只有在一定的尺寸下才是热力学稳定的。这一结论可以用来解释InAs量子点的锐利尺寸分布。(C)2001年美国物理研究所。
InAs was grown by molecular-beam epitaxy onto GaAs(001) until quantum dots (QDs) formed. At this point, the growth was interrupted and the uncovered QDs were investigated in situ by scanning tunneling microscopy (STM). Atomically resolved STILI images of the QDs revealed that four dominating bounding facets occur, whose Miller indices were identified to be {137}. The assignment of the facet orientation was based on experiments on planar high Miller index GaAs surfaces. In addition, the latter experiments indicated that (137) facets are thermodynamically stable only up to a certain size. This conclusion is assumed to explain the sharp size distribution of InAs QDs. (C) 2001 American Institute of Physics.