Characterization of helium ion implanted reduced activation ferritic/martensitic steel with positron annihilation and helium thermal desorption methods
Characterization of helium ion implanted reduced activation ferritic/martensitic steel with positron annihilation and helium thermal desorption methods
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DOI：
10.1016/j.jnucmat.2013.03.029
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发表时间：
2013-11
影响因子：
3.1
通讯作者：
I. Carvalho;H. Schut;A. Fedorov;N. Luzginova;J. Sietsma
中科院分区：
文献类型：
--
作者：
I. Carvalho;H. Schut;A. Fedorov;N. Luzginova;J. Sietsma
用低能3 keV He离子注入Eurofer 97钢，再现了由缺陷的产生和热演化引起的辐照损伤，并用正电子湮没多普勒展宽技术（PADB）和热脱附谱（TDS）研究了注入He的行为。PADB的结果表明，在1200 K退火1小时去除了大部分预先存在的缺陷。在两组样品中进行了3 keV的He ~+辐照--“表面抛光”和“退火”（1200 K，1 h），剂量高达1018- 1019 He/cm ~ 2。样品在375 K和525 K温度下注入。初步的TDS研究表明，当注入在375 K，大部分的他释放在解吸温度低于1000 K，很可能是有关的空位和小的He团簇捕获。在575 K时，大部分脱附发生在更高的温度（>1000 K）下，并且与更大的He空位团簇（如气泡或空隙）的形成有关。观察到注入过程中He向本体的迁移，因为在He注入范围更深的深度处多普勒展宽参数减小。
Low energy 3 keV He implantations were carried out on Eurofer97 steel to reproduce the radiation damage induced by the creation and thermal evolution of the defects and the behavior of the implanted He is studied with the positron annihilation Doppler broadening technique (PADB) and thermal desorption spectroscopy (TDS). PADB results show that annealing at 1200 K for 1 h removes the majority of pre existing defects. The 3 keV He+implantations were carried out in two sets of samples – ‘surface polished’ and ‘annealed’ (1200 K, 1 h), up to doses of 1018–1019He/cm2. The samples were implanted at temperatures of 375 K and 525 K. The preliminary TDS studies show that when implanting at 375 K, the majority of He is released at desorption temperatures below 1000 K and is likely to be related to trapping at vacancies and small He clusters. At 575 K, the larger part of the desorption takes place at higher (>1000 K) temperatures and is associated with the formation of larger He–vacancy clusters, such as bubbles or voids. The migration of He during implantation towards the bulk is observed as a decrease in Doppler broadening parameter at depths much deeper the He implantation range.