Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding
Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding
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DOI：
10.1143/apex.1.072301
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发表时间：
2008-07-01
影响因子：
2.3
通讯作者：
Ito, Tatsuya
中科院分区：
文献类型：
--
作者：
Kanbe, Hiroshi;Miyaji, Masayuki;Ito, Tatsuya
Ge/Si异质结通过在250或350摄氏度的退火温度下的湿晶片键合形成。使用Ge/Si异质结制造的光电二极管在1000和1550 nm之间的波长处表现出流过异质结的光电流，其内部量子效率高于80%。测量的光电流-电压和电容-电压特性表明，异质结的电学性质是相同的样品通过较高的温度退火制造。(C)2008年日本应用物理学会。
Ge/Si heterojunctions are formed by wet wafer bonding at annealing temperatures of 250 or 350 degrees C. Photodiodes fabricated using Ge/Si heterojunctions exhibit photocurrents flowing over the heterojunction with an internal quantum efficiency higher than 80% at wavelengths between 1000 and 1550nm. The measured photocurrent-voltage and capacitance-voltage characteristics reveal that the electrical property of the heterojunctions is the same as that for samples fabricated by higher temperature annealing. (C) 2008 The Japan Society of Applied Physics.