3 ns single-shot read-out in a quantum dot-based memory structure
3 ns single-shot read-out in a quantum dot-based memory structure
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DOI：
10.1063/1.4864281
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发表时间：
2014-02
影响因子：
4
通讯作者：
T. Nowozin;A. Beckel;D. Bimberg;A. Lorke;M. Geller
中科院分区：
文献类型：
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作者：
T. Nowozin;A. Beckel;D. Bimberg;A. Lorke;M. Geller
使用二维电子气演示了在基于量子点（QD）的存储器中从基态和第一激发态快速读出每个点2到6个电荷。对嵌入InAs/GaAs量子点的调制掺杂场效应晶体管结构的单次测量显示读出时间短至3 ns。在低温下（T = 4.2 K），这种读出时间仍然受到设置和器件结构的寄生效应的限制。更快的读出时间和更大的读出信号，预计为改进的设置和设备结构。
Fast read-out of two to six charges per dot from the ground and first excited state in a quantum dot (QD)-based memory is demonstrated using a two-dimensional electron gas. Single-shot measurements on modulation-doped field-effect transistor structures with embedded InAs/GaAs QDs show read-out times as short as 3 ns. At low temperature (T = 4.2 K) this read-out time is still limited by the parasitics of the setup and the device structure. Faster read-out times and a larger read-out signal are expected for an improved setup and device structure.