Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN
Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN
复制标题
GaN氢化物气相外延的热力学分析
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
H. Seki
中科院分区：
文献类型：
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作者：
A. Koukitu;S. Hama;Tetsuya Taki;H. Seki
对氮化镓的氢化物气相外延（HVPE）进行了热力学分析。根据温度、输入GaCl分压、输入V/III比和相对于惰性气体原子的氢的摩尔分数，计算了与GaN平衡的气态分压。结果表明，载气中氢的摩尔分数对氮化镓的沉积有显著影响。并与文献报道的实验数据进行了比较。结果表明，HVPE生长的氮化镓的生长速率是受热力学控制的。
A thermodynamic analysis of hydride vapor phase epitaxy (HVPE) is described for GaN. The partial pressures of gaseous species in equilibrium with GaN are calculated for temperatures, input GaCl partial pressures, input V/III ratios and mole fractions of hydrogen relative to the inert gas atoms. It is shown that the deposition of GaN is significantly influenced by the hydrogen mole fraction in the carrier gas. The growth rate is discussed in comparison with the experimental data reported in the literature. It is shown that the growth rate of GaN grown using HVPE is thermodynamically controlled.