Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application
Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application
复制标题
用于磁阻随机存取存储器应用的磁隧道结三维集成技术
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
S. Yuasa
中科院分区：
文献类型：
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作者：
K. Yakushiji;H. Takagi;N. Watanabe;A. Fukushima;K. Kikuchi;Y. Kurashima;A. Sugihara;H. Kubota;S. Yuasa
开发了垂直磁化磁性隧道结（p-MTJ）的三维集成工艺（基于直接键合和背面硅去除）。完美的晶圆键合，即没有界面空隙的键合，和无损硅去除成功地证明了使用非常平坦的钽帽层。此外，经受这些过程的p-MTJ纳米柱在磁阻或自旋转移矩（STT）切换方面没有表现出退化。结合这些工艺（直接晶片键合和背面硅去除）的磁阻随机存取存储器（MRAM）技术将使集成外延MTJ（具有单晶隧道势垒）和铁磁电极层（基于新材料）成为可能。
Three-dimensional integration processes (based on direct wafer bonding and back-surface silicon removal) for magnetic tunnel junctions with perpendicular magnetization (p-MTJs) were developed. Perfect wafer bonding, namely, bonding without interfacial voids, and damageless silicon removal were successfully demonstrated by using very flat tantalum cap layers. Moreover, p-MTJ nanopillars subjected to these processes exhibited no degradation in magnetoresistance or spin-transfer-torque (STT) switching. Magnetoresistive random access memory (MRAM) technology incorporating these processes (direct wafer bonding and back-surface silicon removal) will make it possible to integrate epitaxial MTJs (with a single-crystal tunnel barrier) and ferromagnetic electrode layers (based on new materials).