Novel dual-mode photoresist based on cationic polymerization and acidolysis
Novel dual-mode photoresist based on cationic polymerization and acidolysis
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基于阳离子聚合和酸解的新型双模光刻胶
DOI:
10.1021/cm00033a022
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发表时间:
1993
期刊:
影响因子:
--
通讯作者:
T. Yamaoka
中科院分区:
文献类型:
--
作者:
Seongyun Moon;Kazuhiko Naitoh;T. Yamaoka
Copolymers of p-hydroxystyrene and p-(2-(vinyloxy) ethoxy) styrene were synthesized, and positive resists with sensitivities of ca. 25 mJ/cm1 2 345678910at 365-nm light by using diphenyliodonium 8-anilinonaphthalene-l-sulfonate and ca. 106 m J/cm2 at 248-nm light by using triphenylsulfonium trifluoromethanesulfonate as photoacid generator were obtained. A copolymer of p-hydroxy-styrene and p-(2-(vinyloxy) ethoxy) styrene containing a photoacid generator had either positive or negative working behavior, depending on process conditions such as prebaking temperature or exposure energy. This complicated behavior is caused by the diverse reaction modes of vinyl ether groups. The pendant vinyl ether group reacts with the hydroxyl group of phenol with the aid of thermal energyto form cross-linked networks. The cross-links are cleaved by photogenerated acids. The vinyl ether groups also undergocompeting reactions between cationic polymerization and acidolysis by photogenerated acids.