Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
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Sabre 电路模拟器中实现的碳化硅 PiN 和合并的 PiN 肖特基功率二极管模型
DOI：
10.1109/pesc.2001.954431
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
R. Singh
中科院分区：
文献类型：
--
作者：
T. McNutt;A. Hefner;A. Mantooth;J. Duliere;D. Berning;R. Singh
建立了碳化硅（SiC）功率二极管的动态紧凑型电热模型。提取了1500 V SiC合并PiN肖特基二极管和5000 V SiC合并PiN肖特基二极管的模型参数，并给出了模型结果。验证了模型的状态特性、温度依赖性和反向恢复特性、di/dt、dv/dt和温度依赖性。
Dynamic compact electrothermal models are developed for silicon carbide (SiC) power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN Schottky and 5000 V SiC PiN diodes. The models are verified for on-state characteristics, temperature dependence and reverse recovery characteristics, di/dt, dv/dt, and temperature dependence.