Neutron and X-ray irradiation of silicon based Mach-Zehnder modulators
Neutron and X-ray irradiation of silicon based Mach-Zehnder modulators
复制标题
硅基马赫曾德调制器的中子和 X 射线辐照
DOI：
10.1088/1748-0221/10/03/c03040
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发表时间：
2015
影响因子：
1.3
通讯作者：
M. Zeiler
中科院分区：
文献类型：
--
作者：
S. E. Nasr;S. Détraz;L. Olanterä;C. Sigaud;C. Soós;G. Pezzullo;J. Troska;F. Vasey;M. Zeiler
我们报告了我们最近对在高亮度大型强子对撞机最恶劣的辐射环境中使用硅基马赫曾德尔调制器的潜力的调查。使用位于新鲁汶回旋加速器资源中心的 20 MeV 中子束线和 CERN PH 部门的 X 射线辐照设施，研究了电离和非电离辐射对设备性能的影响。该装置暴露于总注量和电离剂量分别为1.2×1015 n cm−2 和1.3 MGy。
We report on our recent investigation into the potential for using silicon-based Mach-Zehnder modulators in the harshest radiation environments of the High-Luminosity LHC. The effect of ionizing and non-ionizing radiation on the performance of the devices have been investigated using the 20 MeV neutron beam line at the Cyclotron Resource Centre in Louvain-La-Neuve and the X-ray irradiation facility in the CERN PH department. The devices were exposed to a total fluence and ionizing dose of 1.2×1015 n cm−2 and 1.3 MGy respectively.